Epitaxial Growth of an n-type Ferromagnetic Semiconductor CdCr2Se4 on GaAs(001) and GaP(001)

We report the epitaxial growth of CdCr2Se4, an n-type ferromagnetic semiconductor, on both GaAs and GaP(001) substrates, and describe the structural, magnetic and electronic properties. Magnetometry data confirm ferromagnetic order with a Curie temperature of 130 K, as in the bulk material. The magnetization exhibits hysteretic behavior with significant remanence, and an in-plane easy axis with a coercive field of ~125 Oe. Temperature dependent transport data show that the films are semiconducting in character and n-type as grown, with room temperature carrier concentrations of n ~ 1 x 10^18 cm-3.Comment: 12 pages, 3 figure

Optoelectric spin injection in semiconductor heterostructures without ferromagnet

We have shown that electron spin density can be generated by a dc current flowing across a $pn$ junction with an embedded asymmetric quantum well. Spin polarization is created in the quantum well by radiative electron-hole recombination when the conduction electron momentum distribution is shifted with respect to the momentum distribution of holes in the spin split valence subbands. Spin current appears when the spin polarization is injected from the quantum well into the $n$-doped region of the $pn$ junction. The accompanied emission of circularly polarized light from the quantum well can serve as a spin polarization detector.Comment: 2 figure

The Static and Dynamic Lattice Changes Induced by Hydrogen Adsorption on NiAl(110)

Static and dynamic changes induced by adsorption of atomic hydrogen on the NiAl(110) lattice at 130 K have been examined as a function of adsorbate coverage. Adsorbed hydrogen exists in three distinct phases. At low coverages the hydrogen is itinerant because of quantum tunneling between sites and exhibits no observable vibrational modes. Between 0.4 ML and 0.6 ML, substrate mediated interactions produce an ordered superstructure with c(2x2) symmetry, and at higher coverages, hydrogen exists as a disordered lattice gas. This picture of how hydrogen interacts with NiAl(110) is developed from our data and compared to current theoretical predictions.Comment: 36 pages, including 12 figures, 2 tables and 58 reference

Epitaxial Growth of the Diluted Magnetic Semiconductors CryGe1-y and CryMnxGe1-x-y

We report the epitaxial growth of CryGe1-y and CryMnxGe1-x-y(001) thin films on GaAs(001), describe the structural and transport properties, and compare the measured magnetic properties with those predicted by theory. The samples are strongly p-type, and hole densities increase with Cr concentration. The CryGe1-y system remains paramagnetic for the growth conditions and low Cr concentrations employed (y < 0.04), consistent with density functional theory predictions. Addition of Cr into the ferromagnetic semiconductor MnxGe1-x host systematically reduces the Curie temperature and total magnetization.Comment: 4 pages, 4 figures, submitted to Applied Physics Letter

Electric-field dependent spin diffusion and spin injection into semiconductors

We derive a drift-diffusion equation for spin polarization in semiconductors by consistently taking into account electric-field effects and nondegenerate electron statistics. We identify a high-field diffusive regime which has no analogue in metals. In this regime there are two distinct spin diffusion lengths. Furthermore, spin injection from a ferromagnetic metal into a semiconductor is enhanced by several orders of magnitude and spins can be transported over distances much greater than the low-field spin diffusion length.Comment: 5 pages, 3 eps figure